Web28 mei 2012 · The results provide the kinetic energy and angular distributions of product ions. The analysis of the results indicates that the dissociation leading to C(2)H(+)+H(+) … WebThe control of ion energy and angular distributions (IEADs) is critically important for etching of high aspect ratio (AR) structures because the velocity vector of ions is not …
Measurement of aspect ratio dependent ion energy distribution …
WebA gridded ion chamber was used to measure the fission fragment angular distribution and total kinetic energy for the exp 235 U(n,f) reaction from 0.18 to 8.81 掌桥科研 一站式科 … Webthe measurements of the energy and angular distributions of the ions scattered. For the nuclei 40Ca , «Ca and 208Pb the first excited levels lie sufficienly high at energ.es of 3.3, 3.8, and 2.6 MeV, respec tively, and this fact lowers substantially the inelastic scattering probability. On the other hand, at the projectile energy 6 philip borggren
Ion Energy and Angular Distribution in Biased Inductively Coupled …
Web1 okt. 2013 · The control of ion energy and angular distributions (IEADs) is critically important for anisotropic etching or deposition in microelectronic fabrication processes. … Web1 dec. 2005 · Ion-energy distributions from copper, indium, and tungsten targets were measured during reactive sputtering in argon-hydrogen sulfide (H{sub 2}S) mixtures, since reactive magnetron sputtering of sulfides from metallic targets is of increasing interest, especially for photovoltaic applications (buffer and absorber layers, i.e., CuInS{sub 2}, … WebWe studied the angular distributions of silicon and nitrogen atoms emitted from a Si target subjected to reactive sputtering by N 2 + ions at primary energies of 0.5 and 2keV. The composition of the deposited material does not depend strongly on the substrate position. From a comparison with nonreactive sputtering, we show that the observed shift of the Si … philip boren